Evaluation of temperature dependence and lifetime of 79GHz power amplifier

Author

Chen Yang Li ; Yoshida, Takafumi ; Katayama, Kengo ; Motoyoshi, Mizuki ; Takano, Kyoya ; Amakawa, Shuhei ; Fujishima, Minoru

Author_Institution

Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

100

Lastpage

101

Abstract

A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author´s knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.

Keywords

CMOS integrated circuits; field effect MIMIC; integrated circuit reliability; millimetre wave power amplifiers; 4-stages common source structure; CMOS process; PA lifetime; PA reliability; circuit characteristic; frequency 79 GHz; maximum PAE; power amplifier; room temperature; saturated output power; size 40 nm; temperature 100 C; temperature 293 K to 298 K; temperature dependence evaluation; CMOS integrated circuits; Current measurement; Degradation; Power amplifiers; Temperature; Temperature dependence; Temperature measurement; CMOS; lifetime of PA; millimeter-wave; power amplifier; temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602258

Filename

6602258