Title :
Expansion of SRAM operation margin by adaptive voltage supply
Author :
Kishida, Kuinharu ; Tsujii, Tomohiro ; Makino, Hiroaki ; Yoshimura, Tetsuzo ; Iwade, Shuhei ; Matsuda, Yuuki
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Osaka Inst. of Technol., Osaka, Japan
Abstract :
This paper describes the expansion of the operation margin of the SRAM by optimizing the supply voltage condition. To find the optimum voltage, the whole SRAM circuit is designed, which includes the worst case memory cells for the read and the write operations considering the local Vth fluctuation. By the SPICE simulation using 45-nm parameters, successful operation is obtained for wide Vth range by controlling voltages of the word line, the power line and the GND line of memory cells. As a result, the stable operation was confirmed for the wide Vth range of 0.25V-0.65V. By using these results, we can rescue a lot of LSIs which fail under the normal voltage condition.
Keywords :
SPICE; SRAM chips; circuit simulation; integrated circuit design; power supply circuits; GND line; LSI; SPICE simulation; SRAM circuit design; SRAM operation margin; Vth fluctuation; adaptive voltage supply; normal voltage condition; optimum voltage; power line; read and the write operations; size 45 nm; supply voltage condition; voltage 0.25 V to 0.65 V; word line; worst case memory cells; Fluctuations; Integrated circuit modeling; Random access memory; SPICE; Threshold voltage; Transistors; Voltage control; SRAM; adaptive voltage supply; fluctuation; operation margin; threshold voltage;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602260
