Dry etching of low k materials

Author

Vanhaelemeersch, S. ; Alaerts, C. ; Baklanov, M. ; Struyf, H.

Author_Institution

IMEC, Leuven, Belgium

fYear

1999

fDate

1999

Firstpage

97

Lastpage

99

Abstract

The introduction of low k materials has introduced the need for new dry etch processes. The requirements for these dry etch processes are reviewed. Basic etch characteristics, under both afterglow and RIE conditions, for different low k polymers are discussed. The etch recipes were tested for use in dual damascene back end schemes. The most important issues are briefly discussed. Fine tuning of the etch processes must go hand in hand with further development of the back end integration schemes

Keywords

dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; permittivity; polymer films; sputter etching; RIE conditions; afterglow conditions; back end integration; dry etch processes; dry etching; dual damascene back end processes; etch characteristics; etch process tuning; etch recipes; low k materials; low k polymers; Aluminum; Dielectric materials; Dry etching; Metallization; Plasma applications; Plasma materials processing; Plasma temperature; Polymers; Testing; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787089

Filename

787089