Title :
Dry etching of low k materials
Author :
Vanhaelemeersch, S. ; Alaerts, C. ; Baklanov, M. ; Struyf, H.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The introduction of low k materials has introduced the need for new dry etch processes. The requirements for these dry etch processes are reviewed. Basic etch characteristics, under both afterglow and RIE conditions, for different low k polymers are discussed. The etch recipes were tested for use in dual damascene back end schemes. The most important issues are briefly discussed. Fine tuning of the etch processes must go hand in hand with further development of the back end integration schemes
Keywords :
dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; permittivity; polymer films; sputter etching; RIE conditions; afterglow conditions; back end integration; dry etch processes; dry etching; dual damascene back end processes; etch characteristics; etch process tuning; etch recipes; low k materials; low k polymers; Aluminum; Dielectric materials; Dry etching; Metallization; Plasma applications; Plasma materials processing; Plasma temperature; Polymers; Testing; Wiring;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787089
