Title :
Wideband power amplifier MMICs utilizing GaN on SiC
Author :
Reese, Eli ; Allen, Donald ; Lee, Cathy ; Nguyen, Tuong
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
The application of GaN on SiC technology to wideband power amplifier MMICs is explored. The unique characteristics of GaN on SiC applied to reactively matched and distributed wideband circuit topologies are discussed, including comparison to GaAs technology. A 2 - 18 GHz 11W power amplifier MMIC is presented as an example.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; network topology; silicon compounds; wide band gap semiconductors; wideband amplifiers; GaN; frequency 2 GHz to 18 GHz; power 11 W; wideband circuit topologies; wideband power amplifier MMIC; Broadband amplifiers; Circuit topology; Distributed amplifiers; Frequency; Gallium nitride; MMICs; Power amplifiers; Silicon carbide; Thermal conductivity; Voltage; Gallium Nitride; MMIC power amplifiers; Silicon Carbide; broadband power amplifiers;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5514723
