• DocumentCode
    3085036
  • Title

    Post etch cleaning of dual damascene system integrating copper and SiLKTM

  • Author

    Louis, D. ; Peyne, C. ; Arvet, C. ; Lajoinie, E. ; Maloney, D. ; Lee, S.

  • Author_Institution
    CEA, Centre d´´Etudes Nucleaires de Grenoble, France
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    103
  • Lastpage
    105
  • Abstract
    This work presents an approach to the cleaning process for the integration of copper and SiLKTM in a dual damascene structure. This paper addresses some problems of post etch residue removal and copper contamination, as well as a wet only process for resist removal with exposed SiLKTM
  • Keywords
    copper; dielectric thin films; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; organic compounds; permittivity; surface cleaning; surface contamination; Cu; cleaning process; copper contamination; copper-SiLK dual damascene structure; copper/SiLK integration; dual damascene system; exposed SiLK; post etch cleaning; post etch residue removal; resist removal; wet clean-only process; Chemical technology; Cleaning; Contamination; Copper; Dielectrics; Hafnium; Lithography; Plasma applications; Resists; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology, 1999. IEEE International Conference
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-5174-6
  • Type

    conf

  • DOI
    10.1109/IITC.1999.787091
  • Filename
    787091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3085036