Title :
Cu interconnect technologies in Fujitsu and problems in installing Cu equipment in an existing semiconductor manufacturing line
Author :
Yamada, Masao ; Yagi, Haruyosi ; Sugatani, Shinji ; Miyajima, Motosu ; Matsunaga, Daisuke ; Hosoda, Tsutomu ; Kudo, Hiroshi ; Misawa, Nobuhiro ; Nakamura, Tomoji
Author_Institution :
ULSI Dev. Div., Fujitsu Ltd., Japan
Abstract :
Summary form only given. In this paper, Cu interconnect technologies in Fujitsu targeted for the 0.18 μm generation and beyond are introduced. Some new integration schemes for Cu wiring are also demonstrated, targeted for the 0.13 μm generation. Finally, we discuss some important aspects of installation of Cu equipment in an existing semiconductor manufacturing line
Keywords :
copper; integrated circuit design; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; 0.13 micron; 0.18 micron; Cu; Cu equipment; Cu equipment installation; Cu interconnect technology; Cu wiring integration schemes; semiconductor manufacturing line; High K dielectric materials; High-K gate dielectrics; Laboratories; Manufacturing; Microprocessors; Semiconductor device manufacture; Semiconductor materials; Ultra large scale integration; Wiring; Yagi-Uda antennas;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787094
