Title :
Atmospheric pressure processed InGaZnO thin-film transistors
Author :
Furuta, Mamoru ; Kawaharamura, Toshiyuki
Author_Institution :
Dept. of Environ. Sci. & Technol., Kochi Univ. of Technol., Kami, Japan
Abstract :
High-mobility indium-gallium-zinc oxide thin-film transistor (IGZO TFT) was demonstrated at 360 °C with the IGZO channel and aluminum oxide (AlOx) gate dielectric stack that was deposited ozone-assisted atmospheric pressure chemical vapour deposition used ultrasonic atomized solution mist as precursors. Field effect mobility of 7.7 cm2/Vs and subthreshold swing of 0.32 V/dec were achieved. These electrical properties are comparable to the vacuum-processed IGZO TFT.
Keywords :
atmospheric pressure; chemical vapour deposition; dielectric materials; electric properties; electron mobility; gallium compounds; indium compounds; thin film transistors; ultrasonic devices; zinc compounds; AlOx; IGZO TFT; IGZO channel; InGaZnO4; chemical vapour deposition; deposited ozone-assisted atmospheric pressure; electrical properties; field effect mobility; gate dielectric stack; high-mobility indium-gallium-zinc oxide thin-film transistor; precursors; subthreshold swing; temperature 360 C; ultrasonic atomized solution mist; Atomic layer deposition; Chemicals; Dielectrics; Films; Iron; Logic gates; Thin film transistors; Indium-gallium-zinc oxide (IGZO); aluminum oxide; atmospheric pressure deposition (APD); ozone (O3); solution process; thin-film transistor (TFT);
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602270
