Atmospheric pressure processed InGaZnO thin-film transistors

Author

Furuta, Mamoru ; Kawaharamura, Toshiyuki

Author_Institution

Dept. of Environ. Sci. & Technol., Kochi Univ. of Technol., Kami, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

124

Lastpage

125

Abstract

High-mobility indium-gallium-zinc oxide thin-film transistor (IGZO TFT) was demonstrated at 360 °C with the IGZO channel and aluminum oxide (AlOx) gate dielectric stack that was deposited ozone-assisted atmospheric pressure chemical vapour deposition used ultrasonic atomized solution mist as precursors. Field effect mobility of 7.7 cm²/Vs and subthreshold swing of 0.32 V/dec were achieved. These electrical properties are comparable to the vacuum-processed IGZO TFT.

Keywords

atmospheric pressure; chemical vapour deposition; dielectric materials; electric properties; electron mobility; gallium compounds; indium compounds; thin film transistors; ultrasonic devices; zinc compounds; AlO_x; IGZO TFT; IGZO channel; InGaZnO₄; chemical vapour deposition; deposited ozone-assisted atmospheric pressure; electrical properties; field effect mobility; gate dielectric stack; high-mobility indium-gallium-zinc oxide thin-film transistor; precursors; subthreshold swing; temperature 360 C; ultrasonic atomized solution mist; Atomic layer deposition; Chemicals; Dielectrics; Films; Iron; Logic gates; Thin film transistors; Indium-gallium-zinc oxide (IGZO); aluminum oxide; atmospheric pressure deposition (APD); ozone (O3); solution process; thin-film transistor (TFT);

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602270

Filename

6602270