Title :
Investigation of Ta, TaN and TaSiN barriers for copper interconnects
Author :
Jiang, Qing-Tang ; Faust, Rick ; Lam, Hieu Robbie ; Mucha, Jay
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
The effects of Ta, TaN, and TaSiN barrier materials on Cu seed layers and subsequent electroplating were investigated. Significant agglomeration of the Cu seed on damascene trench sidewalls was observed after annealing of the seed deposited on Ta and TaN barriers. With TaSiN, a relatively smooth and continuous Cu seed layer was observed both before and after the anneal. XRD studies indicate that Cu-filled damascene lines with TaSiN barriers have the least stress and the strongest (111) texture as compared to Cu-filled lines with Ta and TaN barriers
Keywords :
X-ray diffraction; annealing; chemical interdiffusion; copper; diffusion barriers; electroplating; integrated circuit interconnections; integrated circuit metallisation; internal stresses; surface texture; tantalum; tantalum compounds; Cu electroplating; Cu seed agglomeration; Cu seed layers; Cu stress; Cu(111) texture; Cu-Ta; Cu-TaN; Cu-TaSiN; Cu-filled damascene lines; Cu-filled lines; Ta barriers; TaN barriers; TaSiN barriers; XRD; annealing; barrier materials; copper interconnects; damascene trench sidewalls; smooth continuous Cu seed layer; Annealing; Argon; Atherosclerosis; Bonding; Compressive stress; Copper; Microstructure; Semiconductor materials; Silicon compounds; X-ray scattering;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787098
