DocumentCode
3085160
Title
Evaluation of TaOx nanoparitcles for resistive random access memory
Author
Kado, Keisuke ; Ban, Toshinori ; Uenuma, Mutsunori ; Ishikawa, Yozo ; Yamashita, Ichiro ; Uraoka, Y.
Author_Institution
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Ikoma, Japan
fYear
2013
fDate
5-6 June 2013
Firstpage
130
Lastpage
131
Abstract
We demonstrated a resistive memory using TaOx nanoparticles (NPs) utilizing Bio Nano Process (BNP). TaOx NPs were produced by ferritin proteins. The ReRAM with TaOx NPs exhibits resistive switching behavior evaluated by conductive atomic force microscopy. This result indicates that TaOx nano-ReRAM utilizing BNP can be a high-density non-volatile memory.
Keywords
atomic force microscopy; proteins; random-access storage; tantalum compounds; ReRAM; TaO; atomic force microscopy; bio nano process; ferritin proteins; nanoparitcles; nonvolatile memory; resistive random access memory; resistive switching; Switches; Tin; BNP; Ferritin protein; Nanoparticle; ReRAM; TaOx;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location
Suita
Print_ISBN
978-1-4673-6106-4
Type
conf
DOI
10.1109/IMFEDK.2013.6602273
Filename
6602273
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