DocumentCode :
3085233
Title :
Post etch residue removal: novel dry clean technology using densified fluid cleaning (DFC)
Author :
Beery, Dafna ; Reinhardt, Karen ; Smith, Patricia B. ; Kelley, Janelle ; Sivasothy, Arunthati
Author_Institution :
Gasonics Int., San Jose, CA, USA
fYear :
1999
fDate :
1999
Firstpage :
140
Lastpage :
142
Abstract :
A novel dry cleaning technology has been developed by GaSonics, which was successfully applied to post etch residue removal. Densified fluid cleaning (DFC) is a dry source, liquid mode cleaning technology. It is based on application of densified gases at elevated pressures and low temperatures. When used together with microwave downstream plasma treatments, DFC enables the damage-free removal of heavy post etch residues containing Al, Ti or Cu, which are not readily affected by other wafer cleaning methods
Keywords :
etching; integrated circuit technology; plasma materials processing; surface cleaning; surface contamination; Al; Al residue; Cu; Cu residue; Ti; Ti residue; damage-free residue removal; densified fluid cleaning; densified gases; dry clean technology; dry source liquid mode cleaning technology; gas pressure; gas temperature; heavy post etch residues; microwave downstream plasma treatments; post etch residue removal; wafer cleaning methods; Artificial intelligence; Cleaning; Digital-to-frequency converters; Dry etching; Gases; Inductors; Plasma applications; Plasma sources; Plasma temperature; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
Type :
conf
DOI :
10.1109/IITC.1999.787102
Filename :
787102
Link To Document :
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