DocumentCode :
3085278
Title :
A broadband heterostructure barrier varactor tripler source
Author :
Bryllert, Tomas ; Vukusic, Josip ; Olsen, A.O. ; Stake, Jan
Author_Institution :
Wasa Millimeter Wave AB, Torslanda, Sweden
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
344
Lastpage :
347
Abstract :
We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed to cover a major part of the WR-8 waveguide band. The source comprises a waveguide housing, a six-barrier InP-HBV diode flip-chip mounted on an AlN microstrip filter circuit. The conversion loss 3-dB bandwidth was measured to 17% at a center frequency of 112 GHz. The maximum output power was more than 15 mW for an input power of 300 mW. There are no mechanical tuners or DC-bias, which simplifies assembly and allows for ultra-compact design.
Keywords :
III-V semiconductors; aluminium compounds; flip-chip devices; indium compounds; microstrip filters; millimetre wave devices; varactors; waveguides; wide band gap semiconductors; AlN; HBV diode flip-chip; InP; WR-8 waveguide band; broadband heterostructure barrier varactor tripler source; frequency 112 GHz; microstrip filter circuit; ultracompact design; waveguide housing; Frequency conversion; Heterostructure Barrier Varactor (HBV); III–V semiconductors; millimeter wave diodes; terahertz sources; varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5514735
Filename :
5514735
Link To Document :
بازگشت