DocumentCode
3085303
Title
Device effect of low energy implantation in high density plasma
Author
Wu, Hanming ; Lee, Scott ; Yu, Xing ; Liu, Yong ; Chen, John
Author_Institution
Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2004
fDate
15-16 March 2004
Firstpage
35
Lastpage
38
Abstract
In the present paper, high-density plasma implantation is proposed for shallow junction formation. The inevitable low energy component in ion energy distribution function (IEDF) has been studied by theoretical and numerical methods. Finally, the device effects induced by such a low energy component in IEDF in plasma implantation are analyzed and discussed.
Keywords
ion implantation; plasma materials processing; semiconductor doping; device effect; high density plasma; ion energy distribution function; low energy component; low energy implantation; plasma implantation; Annealing; Distribution functions; Implants; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Semiconductor device manufacture; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306752
Filename
1306752
Link To Document