Title :
Gigahertz multi-transistor graphene integrated circuits
Author :
Sordan, Roman ; Ferrari, A.C.
Author_Institution :
Dept. of Phys., Politec. di Milano, Como, Italy
Abstract :
We review the potential of graphene in ultra-high speed circuits. To date, most of high-frequency graphene circuits typically consist of a single transistor integrated with a few passive components. The development of multi-transistor graphene integrated circuits operating at GHz frequencies can pave the way for applications in which high operating speed is traded off against power consumption and circuit complexity. Novel vertical and planar devices based on a combination of graphene and layered materials could broaden the scope and performances of future devices.
Keywords :
graphene; high-speed integrated circuits; oscillators; radiofrequency integrated circuits; C; circuit complexity; gigahertz multitransistor graphene integrated circuits; high-frequency graphene circuits; layered materials; planar devices; power consumption; ultrahigh-speed circuits; Field effect transistors; Graphene; Inverters; Logic gates; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724538