• DocumentCode
    3085318
  • Title

    Gigahertz multi-transistor graphene integrated circuits

  • Author

    Sordan, Roman ; Ferrari, A.C.

  • Author_Institution
    Dept. of Phys., Politec. di Milano, Como, Italy
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    We review the potential of graphene in ultra-high speed circuits. To date, most of high-frequency graphene circuits typically consist of a single transistor integrated with a few passive components. The development of multi-transistor graphene integrated circuits operating at GHz frequencies can pave the way for applications in which high operating speed is traded off against power consumption and circuit complexity. Novel vertical and planar devices based on a combination of graphene and layered materials could broaden the scope and performances of future devices.
  • Keywords
    graphene; high-speed integrated circuits; oscillators; radiofrequency integrated circuits; C; circuit complexity; gigahertz multitransistor graphene integrated circuits; high-frequency graphene circuits; layered materials; planar devices; power consumption; ultrahigh-speed circuits; Field effect transistors; Graphene; Inverters; Logic gates; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724538
  • Filename
    6724538