DocumentCode
3085318
Title
Gigahertz multi-transistor graphene integrated circuits
Author
Sordan, Roman ; Ferrari, A.C.
Author_Institution
Dept. of Phys., Politec. di Milano, Como, Italy
fYear
2013
fDate
9-11 Dec. 2013
Abstract
We review the potential of graphene in ultra-high speed circuits. To date, most of high-frequency graphene circuits typically consist of a single transistor integrated with a few passive components. The development of multi-transistor graphene integrated circuits operating at GHz frequencies can pave the way for applications in which high operating speed is traded off against power consumption and circuit complexity. Novel vertical and planar devices based on a combination of graphene and layered materials could broaden the scope and performances of future devices.
Keywords
graphene; high-speed integrated circuits; oscillators; radiofrequency integrated circuits; C; circuit complexity; gigahertz multitransistor graphene integrated circuits; high-frequency graphene circuits; layered materials; planar devices; power consumption; ultrahigh-speed circuits; Field effect transistors; Graphene; Inverters; Logic gates; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724538
Filename
6724538
Link To Document