Title :
The collapse of gate electrode in high-current implanter of batch type
Author :
Kawasaki, Y. ; Tokunaga, K. ; Horita, K. ; Mitsuda, K. ; Yamaguchi, Akira ; Ueno, A. ; Teratani, A. ; Katayama, T. ; Hayami, K. ; Togawa, M. ; Ohno, Y. ; Yoneda, M.
Author_Institution :
Renesas Technol. Corp, Hyogo, Japan
Abstract :
We looked for possible mechanical damage to the gate electrodes during implantation in high-current implanter of batch type and we found that there was damage in gate electrodes with a length of 60 nm to 85 nm, which is caused by collision with particles. It was confirmed that the damage is dependent on spin speed, gate direction and existence of photo resist.
Keywords :
ion implantation; semiconductor doping; batch type high-current implanter; gate direction; gate electrode collapse; mechanical damage; photoresist; spin speed; Dry etching; Electrodes; Resists; Scanning electron microscopy; Space technology; Testing;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306753
