Title :
SiLK CMP process: interaction with slurries studied by surface characterization techniques
Author :
Küchenmeister, Frank ; Schubert, Ulf ; Heeg, Jan ; Wenzel, C.
Author_Institution :
Lab. of Semicond. & Microsyst. Technol., Tech. Univ. Dresden, Germany
Abstract :
The integration of spin-on low dielectric constant materials within existing metallization schemes creates challenges for the material properties and integration technology. The polish characteristics of SiLK using commercially available slurries and changes in topology as well as the surface chemistry as result of the interaction with the slurry were investigated by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The high planarization capability of a CMP process is demonstrated on a patterned wafer. SILK can therefore be considered as a promising candidate for the replacement of silicon dioxide in an Al/W based interconnect technology
Keywords :
X-ray photoelectron spectra; atomic force microscopy; chemical mechanical polishing; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; permittivity; polymer films; spin coating; surface chemistry; surface topography; AFM; Al-W; Al/W based interconnect technology; CMP process; CMP slurry interactions; SiLK CMP process; SiLK polish characteristics; SiO2; X-ray photoelectron spectroscopy; XPS; atomic force microscopy; integration technology; material properties; metallization schemes; patterned wafer; planarization; silicon dioxide replacement; spin-on low dielectric constant materials; surface characterization techniques; surface chemistry; surface topology; Atomic force microscopy; Chemical technology; Chemistry; Dielectric constant; Dielectric materials; Inorganic materials; Material properties; Metallization; Slurries; Topology;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787108
