Title :
RF circuit design aspects of spiral inductors on silicon
Author :
Burghartz, J. ; Edelstein, D. ; Soytter, M. ; Ainspan, H. ; Jenkins, K.
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this experiment, the substrate silicon is removed using micromachining techniques, and the remaining thin-film structure is bonded onto a quartz substrate. The micromachined inductor has Q/sub MAX//spl ap/60 at 6 GHz. The lower resistivity and the greater conductor thickness of copper (Cu) compared to the aluminum (Al) process leads to a 3-4/spl times/ increased Q/sub MAX/ over the entire range of feasible inductance values.
Keywords :
integrated circuit design; 6 GHz; RF circuit design; Si; conductor thickness; feasible inductance values; micromachined inductor; micromachining techniques; resistivity; spiral inductors; thin-film structure; Circuit synthesis; Copper; Micromachining; Radio frequency; Semiconductor thin films; Silicon; Spirals; Substrates; Thin film circuits; Thin film inductors;
Conference_Titel :
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4344-1
DOI :
10.1109/ISSCC.1998.672454