Copper CMP integration and time dependent pattern effect

Author

Pan, J. Tony ; Li, Ping ; Wijekoon, Kapila ; Tsai, Stan ; Redeker, Fritz

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1999

fDate

1999

Firstpage

164

Lastpage

166

Abstract

Pattern dependent copper dishing and oxide erosion have been characterized as a function of overpolishing. Copper thickness loss is the sum of field oxide loss, local oxide erosion, and copper dishing, and all of them increase with the degree of overpolishing. Good agreement was obtained between electrically measured copper thickness and that obtained from physical metrology tools. Copper thickness loss as a function of overpolish was quantified for several structures

Keywords

abrasion; chemical mechanical polishing; copper; dielectric thin films; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; surface topography; thickness measurement; Cu; Cu-SiO₂-Si; copper CMP integration; copper dishing; copper thickness loss; electrically measured copper thickness; field oxide loss; local oxide erosion; overpolishing; pattern dependent copper dishing; pattern dependent oxide erosion; physical metrology tools; time dependent pattern effect; Copper; Dielectrics; Electric variables measurement; Fabrication; Integrated circuit interconnections; Metrology; Monitoring; Surface resistance; Surface topography; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787110

Filename

787110