Title :
High electron mobility triangular InGaAs-OI nMOSFETs with (111)B side surfaces formed by MOVPE growth on narrow fin structures
Author :
Irisawa, T. ; Oda, Masaomi ; Ikeda, Ken-ichi ; Moriyama, Y. ; Mieda, E. ; Jevasuwan, W. ; Maeda, T. ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Miyamoto, Yutaka ; Tezuka, Taro
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), AIST, Tsukuba, Japan
Abstract :
Triangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. Triangular shaped channels with bottom width down to 30 nm were formed by MOVPE growth on narrow InGaAs-OI fins. The formed (111)B surface was demonstrated to provide higher mobility compared with reference InGaAs-OI tri-gate (1.9×) as well as bulk (100) InGaAs nMOSFETs (1.6×), which is possibly due to reduced Dit in conduction band and resultant suppressed carrier trapping at the MOS interface. Lower noise and hysteresis in triangular device supported this model. High Ion value of 930 μA/μm at Lg = 300 nm indicates the potential of the triangular InGaAs-OI nMOSFETs for ultra-low power and high performance CMOS applications.
Keywords :
CMOS integrated circuits; MOCVD; MOSFET; electron mobility; gallium arsenide; indium compounds; low-power electronics; oxygen compounds; vapour phase epitaxial growth; In0.53Ga0.47As-OI; InGaAs-OI; MOS interface; MOVPE growth; Si; conduction band; high electron mobility triangular nMOSFET; high performance CMOS applications; narrow fin structures; reference trigate; resultant suppressed carrier trapping; size 30 nm; smooth (111)B side surfaces; triangular shaped channels; ultra-low power applications; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; MOSFET; Noise; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724542
