Title :
Intrinsic electrical properties of Cu/low-k interconnection
Author :
Bersuker, G. ; Blaschke, V. ; Pekker, D. ; Wick, D.
Author_Institution :
Sematech, Austin, TX, USA
Abstract :
Electrical characterization of Cu/low-k ILD structures was performed to address intrinsic material properties. It was shown that ionic conduction due to contamination inherent to the dielectric was the leading cause of an intrinsic intra-metal line leakage current at low temperatures, while at elevated temperatures, a contribution from electron current was detected. Dielectric and barrier layer parameters that control the conduction process were evaluated
Keywords :
copper; dielectric thin films; impurity distribution; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; ionic conductivity; leakage currents; permittivity; Cu; Cu/low-k ILD structures; Cu/low-k interconnection; barrier layer parameters; conduction process; dielectric contamination; dielectric layer parameters; electrical characterization; electron current; intrinsic electrical properties; intrinsic intra-metal line leakage current; intrinsic material properties; ionic conduction; Atherosclerosis; Copper; Dielectric materials; Dielectrics and electrical insulation; Electrons; Leakage current; Silicon; Temperature; Testing; Voltage;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787113
