Process integration of double level copper-low k (k=2.8) interconnect

Author

Naik, M. ; Parikh, S. ; Li, P. ; Educato, J. ; Cheung, D. ; Hashim, I. ; Hey, P. ; Jenq, S. ; Pan, T. ; Redeker, F. ; Rana, V. ; Tang, B. ; Yost, D.

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1999

fDate

1999

Firstpage

181

Lastpage

183

Abstract

This paper reports a comparative study of double level copper interconnects using Black Diamond (k=2.8) dielectric, fluorinated silicate glass (FSG, k=3.7) and undoped silicate glass (USG, k=4.1). A 25-28% reduction in intra-lead capacitance is realized with k=2.8 dielectric compared to USG. Intra-lead electrical isolation, single via and via chain resistances are comparable for the dielectrics. The linearity of electrically measured line widths and serpent resistances indicate that Black Diamond CMP performance is comparable to USG and FSG. Preliminary wafer level electromigration data for the copper/low-k dielectric is comparable to copper/USG

Keywords

capacitance; chemical mechanical polishing; copper; dielectric thin films; electric resistance; electromigration; glass; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; Black Diamond CMP performance; Black Diamond dielectric; Cu; FSG; USG; copper/USG; copper/low-k dielectric; dielectrics; double level copper interconnects; double level copper-low k interconnect; electrically measured line width linearity; electrically measured serpent resistance linearity; fluorinated silicate glass; intra-lead capacitance; intra-lead electrical isolation; process integration; single via resistance; undoped silicate glass; via chain resistance; wafer level electromigration; Ash; Capacitance; Copper; Dielectric films; Dielectric materials; Dielectric thin films; Electromigration; Glass; Metallization; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787115

Filename

787115