Title :
Analysis of the emitter switched thyristor electrical characteristics
Author :
Flores, D. ; Godignon, P. ; Vellvehí, M. ; Fernández, J. ; Hidalgo, S. ; Rebollo, J. ; Millán, J.
Author_Institution :
Centro Nacional de Microelectronica, CSIC, Barcelona, Spain
Abstract :
This paper addresses the analysis of the emitter switched thyristor (EST). The operation mode and the transient process are studied by means of 2D numerical simulations. Structures with different cell dimensions have been fabricated. The dependence of the maximum controllable current on the geometrical dimensions is also analyzed from experimental results. The comparision of the output characteristics of equivalent EST, IGBT and BRT devices are also reported
Keywords :
numerical analysis; semiconductor device models; semiconductor device testing; thyristors; 2D numerical simulation; electrical characteristics; emitter switched thyristor; experiment; geometrical dimensions; operation mode; output characteristics; transient process; Cathodes; Circuit simulation; Electric variables; Fabrication; Insulated gate bipolar transistors; MOSFETs; Medical simulation; Thyristors; Transient analysis; Voltage control;
Conference_Titel :
Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
Print_ISBN :
0-7803-2423-4
DOI :
10.1109/PEDS.1995.404941
