A high aspect ratio sub 0.2 micron Al plug technology for 0.13 μm generation

Author

Yang, Tsung-Ju ; Ku, Tzu-Kun ; Lee, Tze-Liang ; Tsui, Bing-Yue ; Chen, Lai-Juh ; Hsia, Chin

Author_Institution

Div. of Deep Submicron Technol., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

1999

fDate

1999

Firstpage

209

Lastpage

211

Abstract

This paper describes a sub-0.2 μm Al plug technology with aspect ratio higher than 4 by a two-step cold/hot sputtering using a long-throw sputtering PVD cluster tool for the first time. The key factors for excellent filling, including wetting capability of Ti and TiN_x, cold Al coverage, hot Al temperature and deposition rate have been investigated. Low via resistance (7.5 Ω/via for 0.2 μm vias) and high via chain yield (100% for 10K vias) have been achieved using this technology

Keywords

aluminium; cluster tools; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; sputter deposition; wetting; 0.13 micron; 0.2 micron; 7.5 ohm; Al; Al plug technology; Al-Ti; Al-TiN; Ti wetting; TiN_x wetting; aspect ratio; cold Al coverage; deposition rate; hot Al temperature; long-throw sputtering PVD cluster tool; plug filling; two-step cold/hot sputtering; via chain yield; via resistance; wetting capability; Artificial intelligence; Atherosclerosis; Contamination; Costs; Filling; Plugs; Sputter etching; Sputtering; Temperature; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787124

Filename

787124