Title :
A high aspect ratio sub 0.2 micron Al plug technology for 0.13 μm generation
Author :
Yang, Tsung-Ju ; Ku, Tzu-Kun ; Lee, Tze-Liang ; Tsui, Bing-Yue ; Chen, Lai-Juh ; Hsia, Chin
Author_Institution :
Div. of Deep Submicron Technol., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
This paper describes a sub-0.2 μm Al plug technology with aspect ratio higher than 4 by a two-step cold/hot sputtering using a long-throw sputtering PVD cluster tool for the first time. The key factors for excellent filling, including wetting capability of Ti and TiNx, cold Al coverage, hot Al temperature and deposition rate have been investigated. Low via resistance (7.5 Ω/via for 0.2 μm vias) and high via chain yield (100% for 10K vias) have been achieved using this technology
Keywords :
aluminium; cluster tools; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; sputter deposition; wetting; 0.13 micron; 0.2 micron; 7.5 ohm; Al; Al plug technology; Al-Ti; Al-TiN; Ti wetting; TiNx wetting; aspect ratio; cold Al coverage; deposition rate; hot Al temperature; long-throw sputtering PVD cluster tool; plug filling; two-step cold/hot sputtering; via chain yield; via resistance; wetting capability; Artificial intelligence; Atherosclerosis; Contamination; Costs; Filling; Plugs; Sputter etching; Sputtering; Temperature; Wiring;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787124
