Title :
Demonstration of zero-offset-field operation for top-pinned MTJ with synthetic antiferromagnetic free layer
Author :
Yoshida, Chikako ; Takenaga, Takashi ; Iba, Yoshihisa ; Yamazaki, Yasuyuki ; Uehara, Hideyuki ; Noshiro, Hideyuki ; Tsunoda, Koji ; Hatada, Akiyoshi ; Nakabayashi, Masaaki ; Takahashi, Asami ; Aoki, Masaki ; Sugii, Toshihiro
Author_Institution :
Low-Power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
Abstract :
We have designed and demonstrated a top-pinned magnetic tunnel junction (MTJ) with a synthetic antiferromagnetic (SAF) free layer, which eliminated the offset field. The key SAF structure was designed on the basis of a prediction derived from micromagnetic simulations. As a result, fabricated MTJ with an SAF free layer exhibited stable switching without applying an external field.
Keywords :
antiferromagnetic materials; magnetic switching; magnetic tunnelling; micromagnetics; random-access storage; SAF structure; magnetic tunnel junction; stable switching; synthetic antiferromagnetic free layer; top-pinned MTJ; zero-offset-field operation; Junctions; Magnetic field measurement; Magnetic fields; Magnetic tunneling; Micromagnetics; Switches; Thermal stability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724552
