Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies

Author

Jihyun Seo ; Kyoungrok Han ; Taeun Youn ; Hye-Eun Heo ; Sanghyun Jang ; Jongwook Kim ; Honam Yoo ; Joowon Hwang ; Cheolhoon Yang ; Heeyoul Lee ; Byungkook Kim ; Eunseok Choi ; Keumhwan Noh ; Byoungki Lee ; Byungseok Lee ; Heehyun Chang ; Sungkye Park ; Ku

Author_Institution

R&D Div., SK hynix Inc., Icheon, South Korea

fYear

2013

fDate

9-11 Dec. 2013

Abstract

Our Middle-1X nm MLC NAND (M1X) flash cell is intensively characterized with respect to reliability and manufacturability. For the first time, the novel active air-gap technology is applied to alleviate the drop of channel boosting potential of program inhibition mode, BL-BL interference is reduced to our 2y nm node level by this novel integration technology. Furthermore, it also relaxes the effect of process variation like EFH (Effective Field oxide Height) on cell Vt distribution. Better endurance and retention characteristics can be obtained by p+ doped poly gate. By optimization of active air-gap profile and poly doping level, M1X nm MLC NAND flash memory has been successfully implemented with superior manufacturability and acceptable reliability.

Keywords

NAND circuits; flash memories; logic design; BL-BL interference; M1X MLC NAND flash memory cell; active air-gap profile; active air-gap technology; channel boosting potential; effective field oxide height; poly doping level; poly process integration technologies; process variation; program inhibition mode; retention characteristics; Air gaps; Bit error rate; Doping; Flash memories; Interference; Logic gates; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724554

Filename

6724554