Title :
Characterization and fabrication of SiOx nano-metric films, obtained by reactive sputtering
Author :
Alarcon-Salazar, J. ; Aceves-Mijares, M. ; Roman-Lopez, S. ; Falcony, Ciro
Author_Institution :
Dept. of Electron., INAOE, Tonanzintla Puebla, Mexico
Abstract :
Nano-metric layers were obtained by reactive sputtering using different oxygen/argon (O/Ar) flow rates. Si and SiO targets were used to make SiOx films (x≤2) and these were annealed at three different temperatures, 600 °C, 900 °C and 1100 °C during 30 minutes, in N2 ambient. The samples were characterized by Null Ellipsometry, Fourier Transform Infra Red (FTIR) spectroscopy, Photoluminescence (PL) and Atomic Force Microscopy (AFM). Results show that the as deposited films are off stoichiometric silicon, which move towards stoichiometric SiO2 with annealing. Poor photoluminescence was found. Average roughness (Sa) was determined between 2 a 4 nm after thermal treatments (TT).
Keywords :
Fourier transform spectra; annealing; atomic force microscopy; infrared spectra; nanofabrication; nanostructured materials; photoluminescence; silicon compounds; sputter deposition; stoichiometry; surface roughness; thin films; AFM; FTIR spectroscopy; Fourier transform infrared spectroscopy; SiO2; SiOx nanometric film fabrication; annealing; atomic force microscopy; film deposition; film roughness; nanometric layer characterization; null ellipsometry; off stoichiometric silicon; oxygen-argon flow rates; photoluminescence; reactive sputtering; temperature 1100 degC; temperature 600 degC; temperature 900 degC; thermal treatments; time 30 min; Annealing; Argon; Films; Photoluminescence; Refractive index; Silicon; Sputtering; AFM; FTIR; PL; Si; SiO; TT;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2012 9th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4673-2170-9
DOI :
10.1109/ICEEE.2012.6421157
