Title :
High density metal insulator metal capacitors using PECVD nitride for mixed signal and RF circuits
Author :
Kar-Roy, Arjun ; Hu, Chun ; Racanelli, Marco ; Compton, Cory A. ; Kempf, Paul ; Jolly, Gurvinder ; Sherman, Phil N. ; Zheng, Jie ; Zhang, Zhe ; Yin, Aiguo
Author_Institution :
Adv. Process Technol., Conexant Syst., Newport Beach, CA, USA
Abstract :
High density metal-insulator-metal capacitors with capacitance densities of 1.0 to 2.0 fF/μm2 using PECVD nitride dielectric have been integrated for the first time into the backend metallization layers of a 0.25 μm CMOS process flow. Capacitor breakdown voltage, linearity and reliability meet mixed-signal circuit requirements with less than 0.1% 3-sigma percentage matching for a 0.225 pF capacitor. Less than 0.6 defects/cm2 has been achieved for 2.0 fF/μm2 capacitance density. Q>80 at 2 GHz was measured, indicating its usefulness in RF applications
Keywords :
CMOS integrated circuits; MIM devices; UHF integrated circuits; capacitance; capacitors; dielectric thin films; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; mixed analogue-digital integrated circuits; plasma CVD; silicon compounds; 0.225 pF; 0.25 micron; 2 GHz; CMOS process flow; PECVD nitride; PECVD nitride dielectric; Q value; RF applications; RF circuits; Si3N4; backend metallization layers; capacitance density; capacitor breakdown voltage; capacitor linearity; capacitor reliability; defect density; high density metal insulator metal capacitors; metal-insulator-metal capacitors; mixed signal circuits; mixed-signal circuit requirements; Capacitance; Circuits; Dielectrics; Etching; Insulation; MIM capacitors; Metal-insulator structures; RF signals; Radio frequency; Tin;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787134
