Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET)

The feasibility of ultra low-voltage switching in the proposed Bilayer PseudoSpin Field-Effect Transistor (BiSFET) “beyond CMOS” device concept is illustrated using quantum transport simulations. The BiSFET relies on possible room-temperature superfluid condensation in dielectrically separated graphene layers. Simulations illustrate resulting greatly enhanced interlayer tunneling, and critical voltages for switching between ON and OFF interlayer conductance states below the thermal voltage of ~26 mV at 300 K. The BiSFET switching mechanism is also contrasted to the “drag-counterflow” biasing configuration with much higher switching voltages.