Title :
Nano-device simulation from an atomistic view
Author :
Mori, Nobuya ; Mil´nikov, Gennady ; Minari, H. ; Kamakura, Yoshinari ; Zushi, T. ; Watanabe, Toshio ; Uematsu, M. ; Itoh, Kohei M. ; Uno, S. ; Tsuchiya, Hideaki
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green´s function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.
Keywords :
Green´s function methods; MOSFET; Monte Carlo methods; elemental semiconductors; molecular dynamics method; nanoelectronics; nanowires; silicon; MOSFET; NEGF device simulation; NEGF method; Si; atomic disorder; device characteristics; kinetic Monte Carlo process simulation; molecular dynamic oxidation simulation; nanodevice simulation; nonequilibrium Green function method; random discrete dopant distribution; realistic RDD distributions; realistic atomic structure model; silicon-silicon dioxide interface; transport characteristics; ultrasmall-silicon nanowire transistors; Atomic layer deposition; Educational institutions; Logic gates; MOSFET; Performance evaluation; Phonons; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724564
