DocumentCode
3085980
Title
Solid-state amplifiers for terahertz electronics
Author
Deal, W.R.
Author_Institution
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
fYear
2010
fDate
23-28 May 2010
Firstpage
1122
Lastpage
1125
Abstract
With the fMAX of current generation InP transistors pushing above 1-THz and new transistor scaling in progress, the operational frequency of solid-state amplifiers is being pushed towards THz frequencies. In this paper we present out latest work towards demonstrating THz frequency amplifiers, including measured gain and noise performance of a 0.48 THz low noise amplifier using scaled InP transistors. Initial performance of next generation transistors is also presented, along with infrastructure necessary to package and operate solid-state amplifiers at THz frequencies.
Keywords
indium compounds; low noise amplifiers; submillimetre wave amplifiers; InP; LNA; frequency 0.48 THz; low noise amplifier; next generation transistors; solid-state amplifiers; terahertz electronics; transistor scaling; Frequency measurement; Gain measurement; Indium phosphide; Low-noise amplifiers; Noise measurement; Operational amplifiers; Packaging; Performance gain; Solid state circuits; Transistors; HBT; HEMT; Indium Phosphide; Integrated Circuit; Low Noise Amplifier; MMIC; Terahertz;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5514771
Filename
5514771
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