• DocumentCode
    3085980
  • Title

    Solid-state amplifiers for terahertz electronics

  • Author

    Deal, W.R.

  • Author_Institution
    Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1122
  • Lastpage
    1125
  • Abstract
    With the fMAX of current generation InP transistors pushing above 1-THz and new transistor scaling in progress, the operational frequency of solid-state amplifiers is being pushed towards THz frequencies. In this paper we present out latest work towards demonstrating THz frequency amplifiers, including measured gain and noise performance of a 0.48 THz low noise amplifier using scaled InP transistors. Initial performance of next generation transistors is also presented, along with infrastructure necessary to package and operate solid-state amplifiers at THz frequencies.
  • Keywords
    indium compounds; low noise amplifiers; submillimetre wave amplifiers; InP; LNA; frequency 0.48 THz; low noise amplifier; next generation transistors; solid-state amplifiers; terahertz electronics; transistor scaling; Frequency measurement; Gain measurement; Indium phosphide; Low-noise amplifiers; Noise measurement; Operational amplifiers; Packaging; Performance gain; Solid state circuits; Transistors; HBT; HEMT; Indium Phosphide; Integrated Circuit; Low Noise Amplifier; MMIC; Terahertz;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5514771
  • Filename
    5514771