DocumentCode
3085987
Title
CoSi2/Si Schottky junction formed by high flux metal ion implantation
Author
Hao, Zhang ; Yan, Wang
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2004
fDate
15-16 March 2004
Firstpage
159
Lastpage
161
Abstract
In this paper we present the research of forming CoSi2/Si Schottky barrier through a novel technology - the metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. In implantation parameters: dose 3×1017ion/cm2 Co; energy, 20kV. After implantation the wafers were annealed for 1 minute at 850°C by rapid thermal annealing (RTA). I-V results show that barrier height is 0.64eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72eV. Improvements for this new technique are needed.
Keywords
Schottky barriers; cobalt compounds; elemental semiconductors; ion implantation; rapid thermal annealing; semiconductor doping; semiconductor-metal boundaries; silicon; 0.64 eV; 0.72 eV; 1 min; 20 kV; 850 degC; C-V characteristics; CoSi2-Si; CoSi2/Si Schottky junction; I-V characteristics; annealed; barrier height; electronic characteristics; high flux metal ion implantation; ideality factor; implantation parameters; rapid thermal annealing; Capacitance; Data analysis; Electric resistance; Equivalent circuits; Ion implantation; Leakage current; Schottky barriers; Schottky diodes; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306783
Filename
1306783
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