Electromigration early failure distribution in submicron interconnects

Author

Gall, M. ; Ho, P.S. ; Capasso, C. ; Jawarani, D. ; Hernandez, R. ; Kawasaki, H.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1999

fDate

1999

Firstpage

270

Lastpage

272

Abstract

The early failure issue in electromigration (EM) has been an unresolved subject of study over the last several decades. A satisfying experimental approach for the detection and analysis of early failures has not yet been established. In this study, a new technique utilizing large interconnect arrays in conjunction with the well-known Wheatstone bridge is presented. A total of more than 20,000 interconnects were tested. The results indicate that the EM failure mechanism studied here follows log-normal behaviour down to the 4 sigma level

Keywords

arrays; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; log normal distribution; EM failure mechanism; Wheatstone bridge; early failure; early failure detection; electromigration; electromigration early failure distribution; interconnect arrays; interconnects; log-normal behaviour; Bridge circuits; Electrical resistance measurement; Electromigration; Failure analysis; Laboratories; Research and development; Resistors; Testing; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787141

Filename

787141