Title :
The inhomogeneity of Co/p-poly-Si0.84Ge0.16 Schottky contact
Author :
Wang, Guang-Wei ; Ru, Guo-Ping ; Qu, Xin-Ping ; Li, Bing-Zong
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
The Schottky junction Co/p-poly-SiGe was formed by deposition of Co on p-poly-SiGe thin film through ion beam sputtering (IBS) technique. Inhomogeneity of the Co/p-poly-SiGe contact was studied by I-V-T method in a wide temperature range. The parameters of the Schottky structure can be extracted from the thermionic emission model precisely. Our results show that both the Schottky barrier height and ideality factor are strongly temperature dependent and weakly bias dependent. It is ascribed to the spatial inhomogeneity of the Co/p-poly-SiGe interface. And it may be helpful to can explain some observed deviations from the ideal metal-semiconductor contact mode.
Keywords :
Ge-Si alloys; Schottky barriers; cobalt; semiconductor-metal boundaries; sputtered coatings; thermionic emission; Co-Si0.84Ge0.16; Co/p-poly-Si0.84Ge0.16 Schottky contact; Schottky barrier height; Schottky junction; ideality factor; inhomogeneity; ion beam sputtering; thermionic emission model; Doping; Electrical resistance measurement; Ion beams; Microelectronics; Schottky barriers; Sputtering; Substrates; Temperature dependence; Temperature distribution; Tunneling;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306784
