Title :
Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Author :
Shen, Bo ; Tang, Ning ; Lu, Jie ; Zewei Zheng ; Chen, Dunjun ; Gui, Yongsheng ; Zhijun, Qiu ; Jiang, Chunping ; Shaoling Gu ; Chu, Junhao ; Zhang, Rong ; Zheng, Youdou
Author_Institution :
Jiangsu Provincial Key Lab. of Photonic & Electron. Mater. Sci. & Technol., Nanjing Univ., China
Abstract :
Magnetotransport properties of modulation-doped AlxGa1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Hass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 1012cm-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG and the spin splitting of the 2DEG have also been studied.
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; gallium compounds; interface states; semiconductor heterojunctions; two-dimensional electron gas; wide band gap semiconductors; 75 meV; AlxGa1-xN-GaN; AlxGa1-xN/GaN heterostructures; double periodicity; energy separation; quantum scattering time; spin splitting; strong Shubnikov-de Hass oscillations; transport properties; triangular quantum well; two-dimensional electron gas; Electrons; Epitaxial layers; Gallium nitride; Laboratories; Magnetic fields; Magnetic properties; Magnetic separation; Particle scattering; Physics; Temperature;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306785
