DocumentCode :
3086051
Title :
K-band Si MMIC amplifier and mixer using three-dimensional masterslice MMIC technology
Author :
Nishikawa, K. ; Toyoda, I. ; Kamogawa, K. ; Tokumitsu, T. ; Yamaguchi, C. ; Hirano, M.
Author_Institution :
NTT Wireless Syst. Labs., Kanagawa, Japan
fYear :
1998
fDate :
5-7 Feb. 1998
Firstpage :
252
Lastpage :
253
Abstract :
Recently-developed Si MMICs with high-performance Si devices or on-chip inductors are limited to X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMIC uses three-dimensional (3D) masterslice MMIC technology to overcome these problems.
Keywords :
MMIC amplifiers; K-Band; MMIC amplifier; MMIC mixer; Si; on-chip inductors; substrate resistivity; three-dimensional masterslice MMIC technology; transmission loss; Coplanar waveguides; Distributed parameter circuits; Gallium arsenide; K-band; MMICs; Microwave transistors; Noise figure; Propagation losses; Resistors; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
0-7803-4344-1
Type :
conf
DOI :
10.1109/ISSCC.1998.672457
Filename :
672457
Link To Document :
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