Title :
Analysis of dopant diffusion and defects in Fin structure using an atomistic kinetic Monte Carlo approach
Author :
Noda, Toshio ; Kambham, A.K. ; Vrancken, C. ; Thean, A. ; Horiguchi, Naoto ; Vandervorst, W.
Author_Institution :
Panasonic Corp., Uozu, Japan
Abstract :
An analysis of dopant diffusion and defects in 3D Fin structure using an atomistic lattice kinetic Monte Carlo (KMC) approach are shown. Atomistic KMC simulations are compared with 3D methodology of Atom Probe Tomography (APT). Atomistic dopant distribution in 3D Fin structure is shown. KMC simulation shows that implant temperature has an impact on amorphization and residual defects and dopant-defect complexes are formed at top-of-Fin and edge-of-Fin-side after SPER.
Keywords :
MOSFET; Monte Carlo methods; amorphisation; crystal defects; diffusion; semiconductor doping; 3D fin structure; amorphization; atom probe tomography; atomistic dopant distribution; atomistic lattice kinetic Monte Carlo approach; dopant defect complexes; dopant diffusion; residual defects; Annealing; Implants; Kinetic theory; Monte Carlo methods; Semiconductor process modeling; Silicon; Three-dimensional displays;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724570
