Title :
The simulation breakdown characteristic of 4H-SiC SBD with edge termination extension
Author :
Lv, Hong-liang ; Zhang, Yi-Men ; Zhang, Yu-ming
Author_Institution :
Inst. of Microelectron., Xidian Univ., China
Abstract :
A numerical model for 4H-SiC Schottky barrier diode is presented in this paper and the breakdown performances are achieved. The influence of the edge termination extension on the breakdown characteristic is calculated and analyzed in detail.
Keywords :
Schottky diodes; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC SBD; Schottky barrier diode; breakdown performances; edge termination extension; simulation breakdown characteristic; Argon; Electric breakdown; Equations; Impact ionization; Ion implantation; Schottky barriers; Schottky diodes; Silicon carbide; Termination of employment; Voltage;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306789
