Title :
Comparative investigation of plating conditions on self-annealing of electrochemically deposited copper films
Author :
Ritzdorf, T. ; Chen, L. ; Fulton, D. ; Dundas, C.
Author_Institution :
Div. of Electrochem. Deposition, Semitool Inc., Kalispell, MT, USA
Abstract :
This paper discusses the effects of chemistries and plating conditions on the self-annealing or recrystallization of electrochemically deposited copper films. Current density, plating temperature and the concentrations of the organic additives were found to strongly affect self-annealing of the copper films. The results show that copper films deposited at higher current densities, higher concentrations of organic additives or at lower plating temperatures take less time to complete self-annealing at room temperature
Keywords :
annealing; copper; current density; electroplating; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; recrystallisation; surface chemistry; 20 C; Cu; copper films; current density; electrochemically deposited copper films; organic additive concentrations; plating chemistries; plating conditions; plating temperature; recrystallization; self-annealing; Additives; Annealing; Chemistry; Copper; Current density; Drives; Electrical resistance measurement; Manufacturing processes; Semiconductor films; Temperature;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787146
