Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies

Author

Zhikai Tang ; Qimeng Jiang ; Sen Huang ; Yunyou Lu ; Shu Yang ; Cheng Liu ; Xi Tang ; Shenghou Liu ; Baikui Li ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We have experimentally demonstrated monolithically integrated 600-V enhancement-/depletion-mode (E/D-mode) SiN_x/AlGaN/GaN MIS-HEMTs that feature high drive current, high breakdown voltage, large gate swing, low ON-resistance, low OFF-state leakage, and low current collapse. By employing the integrated E/D-mode devices, a high-voltage low-standby-power start-up circuit for off-line switched-mode power supplies has been realized.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; low-power electronics; semiconductor device breakdown; silicon compounds; switched mode power supplies; wide band gap semiconductors; SiN_x-AlGaN-GaN; breakdown voltage; current collapse; low-standby-power start-up circuit; monolithically integrated enhancement-depletion-mode MIS-HEMT; switched mode power supplies; voltage 600 V; Aluminum gallium nitride; Current measurement; Gallium nitride; Logic gates; Pulse measurements; Switched-mode power supply; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724574

Filename

6724574