Title :
Remarkable advances in SiC power device technology for ultra high power systems
Author :
Imaizumi, Masayuki ; Hasegawa, Shun ; Sumitani, H. ; Iwasaki, Makoto ; Hino, Shigekazu ; Watanabe, Toshio ; Hamada, Kazuya ; Miura, Naruhisa ; Nakata, Sho ; Yamakawa, Satoshi
Author_Institution :
Power Device Works, Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
This paper reports our recent results on high voltage and large current SiC power devices and power modules for high power applications. A railcar traction inverter system equipped with 1200A/1700V SiC hybrid modules exhibits great advantages in size, weight and power consumption compared to a conventional Si inverter system. Reliability of SiC-MOSFETs and characteristics of large current 1200V and 3300V SiC-MOSFETs are also presented and discussed.
Keywords :
invertors; power MOSFET; railways; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; current 1200 A; power MOSFET; power device technology; railcar traction inverter system; reliability; ultra high power systems; voltage 1200 V; voltage 1700 V; voltage 3300 V; Inverters; Logic gates; MOSFET; Reliability; Resistance; Silicon carbide;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724575
