Title :
Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
Author :
Yonezawa, Yoshiyuki ; Mizushima, Tomonori ; Takenaka, Kana ; Fujisawa, Hiroyuki ; Kato, Toshihiko ; Harada, Shingo ; Tanaka, Yuichi ; Okamoto, Mitsuo ; Sometani, Mitsuru ; Okamoto, Dai ; Kumagai, Naoki ; Matsunaga, Shinichiro ; Deguchi, Tadayoshi ; Arai,
Author_Institution :
Adv. Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p++ collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize high channel mobility. We were able to achieve an ultrahigh blocking voltage of more than 16 kV, extremely low forward voltage drop of 5 V at 100 A/cm2 and small threshold voltage shift (<; 0.1 V). These characteristics are useful for Smart Grid and HVDC systems, the use of which would realize a low carbon emission society.
Keywords :
HVDC power transmission; MOSFET; insulated gate bipolar transistors; ion implantation; oxidation; power semiconductor devices; semiconductor device reliability; silicon compounds; smart power grids; wide band gap semiconductors; HVDC systems; IEMOSFET; MOSFET structure; SiC; channel mobility; epitaxial IGBT; epitaxial p++ collector layer; epitaxial p++ collector layer; flip-type n-channel implantation; low carbon emission society; smart grid; ultrahigh blocking voltage; ultrahigh voltage IGBT; voltage 16 kV; voltage 5 V; wet gate oxidation method; Face; Insulated gate bipolar transistors; JFETs; Logic gates; MOSFET; Silicon carbide; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724576
