Title :
Preparation, deposition and characterization of PTFTs based on PCDTBT/PMMA
Author :
Ulloa, L.F. ; Estrada, M. ; Sanchez, J.G. ; Flores, V.M. ; Resendiz, L.
Author_Institution :
Depto. Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico
Abstract :
Frequency dependent capacitance-voltage characteristics of organic thin-film transistor based on poly[N-9´-heptadecanyl-2,7-carbazole-alt-5,5-(4´,7´-di-2-thienyl-2´, 1´, 3´ -benzothiadiazole)] as active layer are investigated. In this paper, we characterize Metal-Insulator-Semiconductor (MIS) structures and Polymeric Thin-Film Transistors (PTFTs) made with PCDTBT as active layer and PMMA as dielectric. The properties of the interface between the dielectric and the active layer are analyzed using CV curves and compared to those obtained for P3HT as active layer. Furthermore, we show that the technique can be used to extract device parameters such as the mobility, and the distribution of states DOS in the active layer of the PTFTs, as well as quantitative information on the influence of charge trapping on transport and other device parameters were obtained and analyzed.
Keywords :
MIS structures; dielectric materials; thin film transistors; active layer; capacitance-voltage characteristics; charge trapping; dielectric; metal-insulator-semiconductor structure; organic thin-film transistor; poly[N-9´-heptadecanyl-2,7-carbazole-alt-5,5-(4´,7´-di-2-thienyl-2´, 1´, 3´ -benzothiadiazole)]; polymeric thin-film transistor; Capacitance; Capacitors; Frequency measurement; Organic thin film transistors; Polymers; Semiconductor device measurement; CV characterization of MIS structures; PCDTBT; PTFTs;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2012 9th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4673-2170-9
DOI :
10.1109/ICEEE.2012.6421178
