• DocumentCode
    3086329
  • Title

    Innovative ESD protections for UTBB FD-SOI technology

  • Author

    Solaro, Y. ; Fonteneau, P. ; Legrand, Charles-Alexandre ; Marin-Cudraz, David ; Passieux, Jeremy ; Guyader, Pascal ; Clement, Laurent-Renaud ; Fenouillet-Beranger, C. ; Ferrari, P. ; Cristoloveanu, S.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    We present an innovative set of UTBB (Ultra-Thin Body and BOX) ESD protection devices, which achieves remarkable performance in terms of leakage current and triggering control. Ultra-low leakage current below 0.1 pA/μm and adjustable triggering (1.1V <; Vt1 <; 2.6V) capability are demonstrated. These devices rely on gate-controlled injection barriers and match the 28nm UTBB-FDSOI ESD design window by triggering before the nominal breakdown voltage of digital core MOS transistors.
  • Keywords
    MOSFET; electrostatic discharge; leakage currents; silicon-on-insulator; UTBB FD-SOI technology; UTBB-FDSOI ESD design window; digital core MOS transistors; gate-controlled injection barriers; innovative ESD protections; nominal breakdown voltage; size 28 nm; triggering control; ultra-low leakage current; ultra-thin body and box ESD protection devices; Current measurement; Electrostatic discharges; Leakage currents; Logic gates; MOS devices; Standards; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724580
  • Filename
    6724580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3086329