Title :
A monolithic current limiting power MOSFET
Author :
Yun, Chong-Man ; Kim, Doo-Young ; Choi, Yeam-lk ; Han, Min-Koo
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new monolithic current limiting power MOSFET is proposed. The MOSFET consists of a main power cell, a sensing cell and a lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without an additional mask step. Overcurrent state is sensed by the pinched resistor of the npn transistor so that any additional sensing resistor is not required. Sensing voltage at the pinched base resistor is 0.7 V. The limiting current level is adjusted easily by an external resistor. Simulation results show that the on-resistance of the power MOSFET is not deteriorated by the sensing and protection circuit. Overcurrent protection is achieved successfully with the protection area less than 0.2% of the whole die area
Keywords :
electric current measurement; electric sensing devices; monolithic integrated circuits; overcurrent protection; power MOSFET; power bipolar transistors; power integrated circuits; resistors; semiconductor device models; external resistor; fabrication; lateral npn bipolar transistor; monolithic current limiting power MOSFET; on-resistance; overcurrent protection; overcurrent state; pinched resistor; power cell; sensing cell; simulation; Bipolar transistors; Current limiters; Equivalent circuits; MOSFET circuits; Power MOSFET; Power engineering and energy; Power system protection; Resistors; Switched-mode power supply; Voltage;
Conference_Titel :
Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
Print_ISBN :
0-7803-2423-4
DOI :
10.1109/PEDS.1995.404945
