DocumentCode
3086392
Title
High field transport characterization in nano MOSFETs using 10GHz capacitance measurements
Author
Diouf, C. ; Cros, A. ; Gloria, Daniel ; Rosa, J. ; Buczko, Marcin ; Ghibaudo, Gerard
Author_Institution
STMicroelectron., Crolles, France
fYear
2013
fDate
9-11 Dec. 2013
Abstract
10 GHz capacitance measurements are performed for the first time to reliably measure the inversion charge in downscaled devices. Effective mobility and average velocity are calculated. Obtained backscattering coefficients in both linear and saturation regimes clearly evidence the onset of non-stationnary transport but still far from the ballistic limit operation.
Keywords
MOSFET; capacitance measurement; high field effects; semiconductor device reliability; average velocity; backscattering coefficients; capacitance measurements; downscaled devices; effective mobility; frequency 10 GHz; high field transport characterization; inversion charge; nano MOSFET; Backscatter; Capacitance measurement; Logic gates; MOSFET; Parasitic capacitance; Q measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724583
Filename
6724583
Link To Document