DocumentCode :
3086427
Title :
A new model for the phototransistor
Author :
Tan, S.W. ; Chen, W.T. ; Chu, M.Y. ; Lour, W.S.
Author_Institution :
Dept. of Electr. Eng., Taiwan Ocean Univ., Keelung, Taiwan
fYear :
2004
fDate :
15-16 March 2004
Firstpage :
232
Lastpage :
235
Abstract :
We reported the fabrication, characterization and modeling of a heterojunction phototransistor. Both Gummel-plot and common-emitter configurations are employed to characterize HPT´s performances and to clearly demonstrate what difference between a voltage-biased and a current-biased HPT. The performances of the voltage- and current-source biased HPTs were also compared to the results from a newly proposed HPT model and related circuit with good agreement found. Although an independent voltage source pushes HBT´s operating point to a higher current level. where the dc current gain is larger, however, the photocurrent generated within B-C region gives very little contribution to final collector current. The optical gain obtained from high-voltage-source biased HPT is even smaller than that of a HPT with a floating base. In addition, a modified extended Ebers-Moll model was successfully used to analyze what the common-emitter characteristics and Gummel-plot differences with input base current as well as base-en-Litter voltage between the dark and illumination situation.
Keywords :
heterojunction bipolar transistors; integrated optoelectronics; optical receivers; phototransistors; semiconductor device models; DC current gain; Gummel-plot configurations; HBT-related technology; common-emitter configurations; current-biased; fabrication; heterojunction phototransistor; independent voltage source; modeling; modified extended Ebers-Moll model; monolithically integrated optical receivers; optical gain; photocurrent; photodetector structures; voltage-biased; Current measurement; Heterojunction bipolar transistors; Optical noise; Optical receivers; Optical saturation; PIN photodiodes; Photodetectors; Phototransistors; Semiconductor device noise; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
Type :
conf
DOI :
10.1109/IWJT.2004.1306826
Filename :
1306826
Link To Document :
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