DocumentCode
3086444
Title
The impact of long-term memory effects on diode power probes
Author
Gomes, Hugo ; Testera, Alejandro R. ; Carvalho, Nuno Borges ; Barciela, Monica F. ; Remley, Kate A.
Author_Institution
Inst. de Telecomun., Univ. de Aveiro, Aveiro, Portugal
fYear
2010
fDate
23-28 May 2010
Firstpage
596
Lastpage
599
Abstract
This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.
Keywords
power measurement; power semiconductor diodes; Volterra series; diode power probes; long-term memory effects; power measurements; power probe baseband circuit; single-tone sinusoidal excitation; Bandwidth; Baseband; Circuits; Diodes; Impedance; Power measurement; Probes; RF signals; Radio frequency; Voltage; Diode Power Probe; Long-term Memory Effects; Nonlinear Devices; Power Measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5514791
Filename
5514791
Link To Document