• DocumentCode
    3086444
  • Title

    The impact of long-term memory effects on diode power probes

  • Author

    Gomes, Hugo ; Testera, Alejandro R. ; Carvalho, Nuno Borges ; Barciela, Monica F. ; Remley, Kate A.

  • Author_Institution
    Inst. de Telecomun., Univ. de Aveiro, Aveiro, Portugal
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    596
  • Lastpage
    599
  • Abstract
    This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.
  • Keywords
    power measurement; power semiconductor diodes; Volterra series; diode power probes; long-term memory effects; power measurements; power probe baseband circuit; single-tone sinusoidal excitation; Bandwidth; Baseband; Circuits; Diodes; Impedance; Power measurement; Probes; RF signals; Radio frequency; Voltage; Diode Power Probe; Long-term Memory Effects; Nonlinear Devices; Power Measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5514791
  • Filename
    5514791