DocumentCode :
3086468
Title :
Effects of ion-implantation on light-emitting FeSi2 shallow junction
Author :
Chou, L.J. ; Lu, H.T. ; Chen, L.J. ; Huang, J.S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2004
fDate :
15-16 March 2004
Firstpage :
240
Lastpage :
244
Abstract :
Effects of ion-implantation and substrate orientation on nanostructures and photoluminescence (PL) of the ultra-thin β-FeSi2 films were investigated. Ion-implantation was found to enhance the formation of β-FeSi2. PL characteristics were strongly affected by implantation species and substrate orientation. The strongest intensity of PL was observed in epitaxial β-FeSi2 ultra-thin films on BF2+-implanted (111)Si.
Keywords :
annealing; ion implantation; iron compounds; photoluminescence; semiconductor epitaxial layers; semiconductor junctions; semiconductor quantum dots; transmission electron microscopy; FeSi2; TEM; annealing; beta-phase formation; energy shift; epitaxial films; implantation species; integrated optoelectronic devices; ion-implantation; light-emitting shallow junction; nanostructures; photoexcitation; photoluminescence; quantum confinement; quantum dots; substrate orientation; ultrathin films; Annealing; Diffraction; Iron; Nanoscale devices; Nanostructures; Optical materials; Quantum dots; Semiconductor films; Semiconductor materials; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
Type :
conf
DOI :
10.1109/IWJT.2004.1306844
Filename :
1306844
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3086468
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