The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs

Author

Yang, R. ; Luo, J.S. ; Tu, J. ; Zhang, R.Z.

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

fYear

2004

fDate

15-16 March 2004

Firstpage

245

Lastpage

248

Abstract

Sub-threshold characteristics of strained SiGe PMOSFETs and Si PMOSFETs are theoretically analyzed with simplified but effective models, then are simulated and compared by using a two-dimensional simulator. Sub-threshold current and sub-threshold slope varying with vertical structure parameters are also studied. Simulation results are well consistent with the theoretical analysis, and show that the sub-threshold characteristics of strained SiGe PMOSFETs, which are worse than those of Si PMOSFETs, are sensitive to vertical structure parameters and worth carefully paying attention to.

Keywords

Ge-Si alloys; MOSFET; semiconductor device models; SiGe; correlative structure parameters; effective models; energy band diagram; off-state current; strained PMOSFET; strained thin layer influence; subthreshold characteristics; subthreshold slope; two-dimensional simulator; vertical structure parameters; Analytical models; Germanium silicon alloys; MOSFET circuits; Medical simulation; Microelectronics; Physics; Power dissipation; Predictive models; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306845

Filename

1306845