Title :
Fractal capacitors
Author :
Samavati, H. ; Hajimiri, A. ; Shahani, A. ; Nasserbakht, G. ; Lee, T.
Author_Institution :
Stanford Univ., CA, USA
Abstract :
This paper introduces a high-density linear capacitor structure with low bottom-plate parasitics. The density of such a structure improves as process technologies scale. Fractal capacitors retain the linearity of metal-to-metal capacitors with limited degradation of Q. The structures automatically limit the length of the thin metal sections to a few microns, keeping the series resistance reasonably small. Another advantage is the reduction of bottom-plate capacitance because of the smaller area.
Keywords :
fractals; bottom-plate capacitance; bottom-plate parasitics; fractal capacitors; high-density linear capacitor structure; process technologies; series resistance; Capacitance; Capacitors; Conductors; Degradation; Electrical resistance measurement; Fractals; Frequency measurement; Joining processes; Libraries; Lithography;
Conference_Titel :
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4344-1
DOI :
10.1109/ISSCC.1998.672459