Title :
Lateral trench electrode power MOS including a local doping region for power electronic system
Author :
Kim, D.J. ; Sung, M.Y. ; Kang, E.G. ; Chung, H.S. ; Nahm, E.S. ; Lee, Dennis J. ; Lee, D.J.
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET" (Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.
Keywords :
isolation technology; power MOSFET; power integrated circuits; semiconductor device breakdown; semiconductor device models; 2-D device simulator; I-V characteristic curves; TMA-MEDICI simulation; TSUPREM-4 process simulator; breakdown characteristics; doping width; electrical characteristics; forward blocking voltage; lateral trench electrode power MOS; power MOSFET; power electronics; smart power IC; trench oxide layer; Breakdown voltage; Doping; Electric variables; Electrodes; Electrons; Fabrication; MOSFET circuits; Power MOSFET; Power electronics; Threshold voltage;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306850
